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58M08 2SC28 05A19 T221031 ADL537 1N6098R 2SD227 DG447
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  2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s a telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2N6901 absolut e maximum rating s (t c = +25c unless otherwise noted) parameter s / tes t conditions drain sourc e voltag e gat e - sourc e voltag e continuou s drai n curren t t c = +25 c continuou s drai n curren t t c = +100 c max . powe r dissipatio n drai n t o sourc e o n stat e resistanc e operatin g & storag e temperatur e symbo l v d s v o s id , i d 2 pt i rdsfon ) top , t st g valu e 1 0 0 1 0 1 . 6 9 1.0 7 8.33' " 1. 4 i: ) -5 5 t o +15 0 unit vd c vd c ad c ad c w q c note : (1 ) derate d linearl y b y 0.06 7 w/ c fo r t c > +25 c (2 ) v o s = 5vdc , i d = l'.07 a electrica l characteristic s (t a = +25c, unless otherwise noted) parameter s / tes t condition s symbo l min . max . uni t of f charactertic s drain-source breakdow n voltag e v g s = ov , i d =-lmad c gate-sourc e voltag e (threshold ) vd s > vgs , i d = 1.0m a vd s > vgs , i d = 1 .oma , t , = +125c v d s > vgs , i d = 1.0ma , t , = -55 c gat e curren t v g s = 10v,v d s = o v v o s = 10v , vd s = 0v , t , = +125 c drai n curren t vg s = 0v . v d s = 80 v v g s = 0v , v d s = 80v , t j = +125 c stati c drain-sourc e on-stat e resistanc e vg s = 5v , i d = 1.07 a pulse d vg s = 5v , i d =1.07 a pulse d diod e forwar d voltag e v gs =ov , i d = 1.69 a pulse d v(br)ds s v g s(lh) l vosith c v g sfth) 3 igss i less ? ids s i loss ? r ds( on) 1 r ds < on) 2 vs d 10 0 1. 0 0. 5 0. 8 2. 0 3. 0 10 0 20 0 1. 0 50. 0 1. 4 2. 6 1. 6 vd c vd c nad c uad c uad c q q vd c 2n690 1 (formerl y to-39 ) n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parnmete r limit s :m d packag e dimension s withou t notice . information , furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibility fo r an y error s o r omission s discovere d i n it s use . n. i semi-conductor s encourage s customer s t o verir v th;i t datasheet s tir e curren t before placin g orders downloaded from: http:///
dynami c characteristic s parameter s / tes t condition s gat e charge : on-stat e gat e charg e _ , y , _ . ? . gat e t o sourc e charg e s ,' d gat e t o dra m charg e d s ~ symbo l qg(on ) min . max . 5. 0 1. 0 2. 9 uni t n c switchin g characteristic s parameter s / tes t condition s switchin g tim e tests : turn-o n dela y tim e rins e tim e turn-of f dela y tim e fal l tim e diod e revers e recover y tim e i d =1.69a,v g s = 5vdc , gat e driv e impedanc e = 25q , v d d = 50vd c di/d t < 10 0 a/us , v d d < 30v , i f = l.o a symbo l t r td(off ) t r tr r min . max . 2 5 8 0 4 5 8 0 25 0 uni t n s n s ?cd - t q i i p i t rf 4 1 f* ^ \ u - u n u i ^ h n c l u l 1 r h h f seatin g plan e --l d drai n (case ) gateo ' t n tl-* - - o sourc e schemati c circui t symbo l c d c h h d l c l d l l l u l i l 2 p q t l t w r a dimension s inche s mi n .30 5 .16 0 .33 5 ma x .33 5 .18 0 .37 0 .20 0 tp .01 6 .50 0 .01 6 .25 0 .10 0 .02 9 .02 8 .02 1 .75 0 .01 9 .05 0 .05 0 .04 5 .03 4 .01 0 45 t p millimeter s mi n 7.7 5 4.0 7 8.5 1 ma x 8.5 1 4.5 7 9.40 5.0 8 t p 0.4 1 12.7 0 0.4 1 6.3 5 2.5 4 0.7 4 0.7 1 0.5 3 19.0 5 0.4 8 1.2 7 1.2 7 1.1 4 0.8 6 0.2 5 45 t p 8, 9 8, 9 8, 9 8, 9 8, 9 6 5 4 3 1 0 6 downloaded from: http:///


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